SCT3120ALGC11
- Manufacturer's number
- Manufacturer Rohm Semiconductor
- Detailed SICFET N-CH 650V 21A TO247N
- Detailed Description N-Channel 650 V 21A (Tc) 103W (Tc) Through Hole TO-247N
Documents & Media
Documents & Media
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | |
| Other Related Documents | |
| Product Training Modules | |
| Video File |
ROHM 4-pin SiC Power MOSFETs | Digi-Key Daily
ROHM's SiC Power and Gate Driver Solutions
SCT3 Series 3rd Gen SiC MOSFETs in 7-pin D2PAK Package
|
| Environmental Information | |
| Featured Product | |
| HTML Datasheet | TO-247N Taping Spec |
| EDA Models | SCT3120ALGC11 - Models |
| Simulation Models | SCT3120AL Spice Model |
Product Attributes
|
TYPE
|
DESCRIPTION
|
SELECT
|
|---|---|---|
|
Category
|
|
|
|
Mfr
|
|
|
|
Series
|
-
|
|
|
Package
|
Tube
|
|
|
Product Status
|
Active
|
|
|
FET Type
|
|
|
|
Technology
|
SiCFET (Silicon Carbide)
|
|
|
Drain to Source Voltage (Vdss)
|
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
18V
|
|
|
Rds On (Max) @ Id, Vgs
|
156mOhm @ 6.7A, 18V
|
|
|
Vgs(th) (Max) @ Id
|
5.6V @ 3.33mA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
38 nC @ 18 V
|
|
|
Vgs (Max)
|
+22V, -4V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
460 pF @ 500 V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
103W (Tc)
|
|
|
Operating Temperature
|
175°C (TJ)
|
|
|
Mounting Type
|
|
|
|
Supplier Device Package
|
TO-247N
|
|
|
Package / Case
|
|
|
|
Base Product Number
|
|
Product inquiry
