IRLB8314PBF
- Manufacturer's number
- Manufacturer Infineon Technologies
- Detailed MOSFET N-CH 30V 171A TO220-3
- Detailed Description N-Channel 30 V 171A (Tc) 125W (Tc) Through Hole TO-220-3
Documents & Media
Documents & Media
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IRLB8314PbF |
| Other Related Documents | Part Number Guide |
| Video File |
General Purpose Power MOSFETs | Datasheet Preview
Overshoot and EMI in Buck Converters - Infineon Technologies
Switch Mode Power Supplies (LAB session) - Infineon Technologies
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| Environmental Information | RoHS Certificate |
| Featured Product |
Data Processing Systems
General Purpose ≤40 V MOSFETs
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| PCN Design/Specification |
Mult Dev Label Chgs Aug/2020
Mult Dev No Format/Barcode Label 15/Jan/2019
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| PCN Assembly/Origin | Mult Dev Wafer Site Chg 18/Dec/2020 |
| PCN Packaging |
Tube Pkg Qty Std Rev 18/Aug/2016
Tube Qty Pk Standard 05/Apr/2017
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| PCN Other | Tube Pkg Qty Standardization 18/Aug/2016 |
| HTML Datasheet | IRLB8314PbF |
| Simulation Models | IRLB8314PBF Saber Model |
Product Attributes
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DESCRIPTION
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Category
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Mfr
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Series
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Package
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Tube
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Product Status
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Active
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FET Type
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25°C
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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2.4mOhm @ 68A, 10V
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Vgs(th) (Max) @ Id
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2.2V @ 100µA
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Gate Charge (Qg) (Max) @ Vgs
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60 nC @ 4.5 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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5050 pF @ 15 V
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FET Feature
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-
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Power Dissipation (Max)
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125W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Supplier Device Package
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TO-220-3
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Package / Case
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Base Product Number
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Product inquiry
