IPW60R190C6
- Manufacturer's number
- Manufacturer Infineon Technologies
- Detailed MOSFET N-CH 600V 20.2A TO247-3
- Detailed Description N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO247-3-1
Documents & Media
Documents & Media
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IPx60R190C6 |
| Other Related Documents | Part Number Guide |
| Featured Product | Data Processing Systems |
| PCN Assembly/Origin | Mult Dev A/T Chgs 3/Nov/2022 |
| HTML Datasheet | IPx60R190C6 |
| Simulation Models | CoolMOS™ Power MOSFET 600V C6 Spice Model |
Product Attributes
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TYPE
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DESCRIPTION
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SELECT
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Category
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Mfr
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Series
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Package
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Tube
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Product Status
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Not For New Designs
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FET Type
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25°C
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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190mOhm @ 9.5A, 10V
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Vgs(th) (Max) @ Id
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3.5V @ 630µA
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Gate Charge (Qg) (Max) @ Vgs
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63 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1400 pF @ 100 V
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FET Feature
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-
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Power Dissipation (Max)
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151W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Supplier Device Package
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PG-TO247-3-1
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Package / Case
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Base Product Number
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Product inquiry
