IRF3808PBF
- Manufacturer's number
- Manufacturer Infineon Technologies
- Detailed MOSFET N-CH 75V 140A TO220AB
- Detailed Description N-Channel 75 V 140A (Tc) 330W (Tc) Through Hole TO-220AB
Documents & Media
Documents & Media
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IRF3808PbF |
| Other Related Documents | IR Part Numbering System |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Environmental Information | RoHS Certificate |
| Featured Product | Data Processing Systems |
| PCN Design/Specification | |
| PCN Assembly/Origin | Mult Dev Wafer Chgs 31/Aug/2021 |
| PCN Packaging | |
| PCN Other | Tube Pkg Qty Standardization 18/Aug/2016 |
| HTML Datasheet | IRF3808PbF |
| EDA Models | IRF3808PBF - Models |
| Simulation Models | IRF3808PBF Saber Model |
Product Attributes
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TYPE
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DESCRIPTION
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SELECT
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Category
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Mfr
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Series
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Package
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Tube
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Product Status
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Active
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FET Type
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25°C
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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7mOhm @ 82A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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220 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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5310 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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330W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Supplier Device Package
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TO-220AB
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Package / Case
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Base Product Number
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Product inquiry
