IRF640PBF
- Manufacturer's number
- Manufacturer Vishay Siliconix
- Detailed MOSFET N-CH 200V 18A TO220AB
- Detailed Description N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB
Documents & Media
Documents & Media
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IRF640, SiHF640 |
| Other Related Documents | Packaging Information |
| PCN Design/Specification | Mult Dev Material Chg 30/Aug/2019 |
| HTML Datasheet | IRF640, SiHF640 |
| EDA Models |
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Product Attributes
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TYPE
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DESCRIPTION
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SELECT
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Category
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Mfr
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Series
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-
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Package
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Bulk
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Product Status
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Active
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FET Type
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25°C
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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180mOhm @ 11A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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70 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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1300 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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125W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Supplier Device Package
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TO-220AB
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Package / Case
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Base Product Number
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Product inquiry
