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DMG6601LVT-7

Documents & Media
Documents & Media
RESOURCE TYPE LINK
Datasheets DMG6601LVT
Environmental Information Diodes Environmental Compliance Cert
PCN Assembly/Origin Mult Dev Wafer Chgs 4/Oct/2019
HTML Datasheet DMG6601LVT
EDA Models DMG6601LVT-7 - Models
Product Attributes
TYPE
DESCRIPTION
SELECT
Category
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.8A, 2.5A
Rds On (Max) @ Id, Vgs
55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
422pF @ 15V
Power - Max
850mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
TSOT-26
Base Product Number


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