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STD10NM60N

Documents & Media
Documents & Media
RESOURCE TYPE LINK
Datasheets STx10NM60N
Other Related Documents STD10NM60N View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
PCN Design/Specification New Lead Frame Design 17/Mar/2023
PCN Assembly/Origin IPG-PWR/14/8552 23/Jun/2014
PCN Packaging
EDA Models STD10NM60N by Ultra Librarian
Product Attributes
TYPE
DESCRIPTION
SELECT
Category
Mfr
Series
Package
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
70W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Supplier Device Package
DPAK
Package / Case
Base Product Number


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