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STP33N60M2

Documents & Media
Documents & Media
Datasheets STx33N60M2
 
Featured Product MDmesh II Plus™ Low Qg Power MOSFETs
 
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
TYPE DESCRIPTION SELECT ALL 
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Series MDmesh™ II Plus
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781pF @ 100V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Part Number STP33N
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)


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