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SIHG22N60E-GE3

Documents & Media
Datasheets SIHG22N60E
 
Video File MOSFET Technologies for Power Conversion
 
PCN Assembly/Origin Mult Devices 18/Aug/2017
 
PCN Packaging Packing Tube Design 19/Sep/2019
 
Online Catalog N-Channel MOSFET (Metal Oxide) 
Product Attributes
TYPE DESCRIPTION SELECT ALL 
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
 
Additional Resources
Standard Package  500


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