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IRF530NPBF

Documents & Media
Datasheets IRF530NPbF
 
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PCN Design/Specification Mult Dev No Format/Barcode Label 15/Jan/2019
 
Simulation Models IRF530NPBF Saber Model
 
Online Catalog N-Channel MOSFET (Metal Oxide) 
Product Attributes
TYPE DESCRIPTION SELECT ALL 
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
FET Feature -
Power Dissipation (Max) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
 
Additional Resources
Standard Package  50
Other Names *IRF530NPBF 
SP001570120 


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